CCMC is committed to becoming one of the main suppliers of semiconductor silicon wafers in the world, breaking the long-term foreign monopoly on the domestic semiconductor silicon wafer market, and realizing the true "Chinese smart manufacturing" in the semiconductor silicon material industry.
The semiconductor silicon wafers of CCMC have various specifications, different material characteristics and surface treatment methods.
From now on, describe the wonderful moments of CCMC. Every moment will become a historical milestone.
We use the CZochralski method (Czochralski) to grow P-type and N-type dislocation-free silicon ingots with crystal orientations of <100>, <111> or <110> respectively. Through high-purity quartz crucibles, superconducting magnetic fields and other applications, we provide Low COP, COP Free, low metal content and high-quality, 100mm/125mm/150mm/200mm/300mm silicon single crystal ingots.
The single crystal ingot is prepared after the processes of slicing, lapping, etching, DK , CVD, polishing, etc., to obtain a polished wafer with high flatness, excellent geometric parameters, clean surface and mirror-like state.
By orderly growing a layer of monocrystalline silicon on a silicon substrate, an epitaxial wafer with a target resistivity thickness is prepared, thereby obtaining a high-quality silicon wafer to meet the requirements of preparing a device.
After the silicon wafer is annealed at a high temperature in an argon annealing furnace, the interstitial oxygen in the near surface area of the silicon wafer is diffused outward, thereby eliminating the void-type micro-defects in the near surface area, forming a clean area, which can improve The electrical properties of silicon wafers.
